rukhan.ece's picture
Dr. Rahamat Ullah Khan
Institute Associate Professor
Department of Electronics Engineering Indian Institute of Technology
rukhan.ece@iitbhu.ac.in
542-2501141
Area of Interest: 
Microwave solid State Devices, Microelectronics, Optoelectronics Devices

R. U. Khan received the B.E., M.E., and Ph.D. degrees in electronics engineering from the Institute of Technology, Banaras Hindu University, Varanasi, India, in 1971, 1973, and 1988, respectively. He joined the Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, (India) as a Lecturer in 1980, Sr. Lecturer in 1988, Reader in 1998 and Associate Professor in 2006. He is presently re-employed as Institute Associate Professor in the Department of Electronics Engineering, IIT (BHU), Varanasi. The present areas of interest are millimeter-wave solid-state devices, MESFETs, MOSFETs, and III-V semiconductor compounds. He has published more than 30 papers in journals and conference proceedings. Dr. Khan received the Foundation life membership of the Semiconductor Society of India.
 

Course Taught:
Undergraduate (UG):

  • Microwave Solid State Devices
  • Reliability Engineering
  • Electronics Workshop
  • Electronics and Instrumentation
  • Electronic Devices and Components

Post Graduate (PG):

  • Solid State Devices
  • Microwave Solid State Devices

 

The present areas of interest are:

  •  Microwave solid State Devices
  • Microelectronics
  • Optoelectronics Devices
  •  millimeter-wave solid-state devices
  • MESFETs, MOSFETs
  • III-V semiconductor compounds
Research Publications
Title Authors Year Journal
Investigation of Pd/TiO2/Si MIS capacitor as hydrogen sensor Shubham, K., Khan, R.U., Chakrabarti, P. 2015 Sensor Review 35(1), pp. 62-67
Characterization of Pd/TiO2/Si metal-insulator-semiconductor sensors for hydrogen detection Shubham, K., Khan, R.U., Chakrabarti, P. 2013 Sensor Letters 11(10), pp. 1950-1955
Electrical characterization of TiO2insulator based Pd / TiO2/ Si MIS structure deposited by sol-gel process Shubham, K., Khan, R.U. 2013 Journal of Nano- and Electronic Physics
5(1),01021
Fabrication and electrical characterization of Pd/TiO2/n-Si MIS structure using TiO2 film as insulator layer deposited by low temperature arc vapor deposition process Shubham, K., Khan, R.U., Chakrabarti, P. 2013 Proceedings of SPIE - The International Society for Optical Engineering
8760,876007
TiO2 thin film-based low concentration MIS hydrogen sensor Shubham, K., Khan, R.U., Chakrabarti, P. 2012 3rd Nirma University International Conference on Engineering, NUiCONE 2012 6493226
Investigation of MIS capacitor with TiO2 thin film as insulator prepared by low temperature arc vapor deposition (LTAVD) process Shubham, K., Khan, R.U., Chakrabarti, P. 2012 2012 International Conference on Emerging Electronics, ICEE 2012
6636243
Effect of substrate illumination on the characteristics of an ion implanted GaAs OPFET Roy, N.S., Pal, B.B., Khan, R.U. 2000 IEE Proceedings: Optoelectronics
147(4), pp. 237-242
Light dependence of SOI MOSFET with nonuniform doping profile Abraham, G.K., Pal, B.B., Khan, R.U. 2000 IEEE Transactions on Electron Devices
47(7), pp. 1469-1471
Frequency-dependent characteristics of an ion-implanted GaAs MESFET with opaque gate under illumination Roy, N.S., Pal, B.B., Khan, R.U. 2000 Journal of Lightwave Technology
18(2), pp. 221-229
Signal modulated OPFET behaviour under back illumination Roy, Nandita Saha, Pal, B.B., Khan, R.U. 2000 Proceedings of SPIE - The International Society for Optical Engineering
3975, pp. I/-
Analysis of GaAs OPFET with improved optical absorption under back illumination Roy, N.S., Pal, B.B., Khan, R.U. 1999 IEEE Transactions on Electron Devices
46(12), pp. 2350-2353
GaAs OPFET characterisation considering concentration dependent carrier mobility and life time Mitra, H., Lohani, R.B., Shubha, Khan, R.U., Pal, B.B. 1999 IETE Journal of Research
45(5-6), pp. 333-339
Optically-controlled ion-implanted GaAs MESFET characteristic with opaque gate Pal, S.B.B., Khan, R.U. 1998 IEEE Transactions on Electron Devices
45(1), pp. 78-84
Optical effect in InAlAs/InGaAs/InP MODFET Mitra, H., Pal, B.B., Singh, S., Khan, R.U. 1998 IEEE Transactions on Electron Devices
45(1), pp. 68-77
Generalized dc model of GaAs optical field effect transistor considering ion-implanted profile Saxena, S.R., Lohani, R.B., Khan, R.U., Pal, B.B. 1998 Optical Engineering
37(4), pp. 1343-1352
Noise Characteristics of a Superlattice Avalanche Region IMPATT Diode Prasad Rao, K.S.V.S.N., Pal, B.B., Khan, R.U. 1996 IETE Journal of Research
42(1), pp. 47-51
Frequency dependent behaviour of an ion implanted GaAs OPFET considering the photovoltaic effect and the gate depletion width modulation Shubha, B.B.P., Honey Kumar, K., Khan, R.U. 1995 Solid State Electronics
38(5), pp. 1097-1102
Superlattice avalanche region IMPATT diode Chandramohan, K.K., Khan, R.U., Pal, B.B. 1994 IETE Journal of Research
40(5-6), pp. 261-265
Theory of the mm wave IMPATT diode: a review Pal, B.B., Khan, R.U., Chakrabarti, P. 1994 IETE Journal of Research
40(1), pp. 35-42
Time Dependent Analysis of an Ion-Implanted GaAs OPFET Pal, B.B., Khan, R.U., Mishra, S., Singh, S., Chattopadhyay, S.N. 1994 IEEE Transactions on Electron Devices
41(4), pp. 491-498
MITATT mode in DDR heterostructure Impatt Khan, R.U., Chakrabarti, P., Pal, B.B. 1987 Applied Physics A Solids and Surfaces
42(4), pp. 303-309
NEW SOLID-STATE DEVICE AS A SOURCE OF POWER IN MM WAVE. Pal, B.B., Khan, R.U., Chakrabarti, P. 1986 IETE Journal of Research
32(5), pp. 397-402
MULTIPLICATION GAIN AND FREQUENCY RESPONSE IN A PHOTO-DOVATT. Pal, B.B., Choudhury, S.C., Khan, R.U. 1985 [No source information available]
HIGH EFFICIENCY HIGH POWER DOVATT DIODE IN THE X-BAND. Khan, R.U., Chaudhary, S.C., Pal, B.B. 1984 IETE Journal of Research
30(5), pp. 121-124
EFFECT OF IMPURITY CONCENTRATION AND BIASING-CURRENT DENSITY ON THE PERFORMANCE OF A NEW DDR HETEROJUNCTION IMPATT DIODE. Pal, B.B., Khan, R.U. 1984 IETE Journal of Research
30(1), pp. 22-25
COMPARATIVE STUDY OF THE PROPERTIES OF SINGLE VELOCITY AND DOUBLE VELOCITY HETERO-JUNCTION IMPATT DIODES. Khan, R.U., Pal, B.B. 1983 IETE Journal of Research
29(2), pp. 68-71
Ph.D. Students Guided

 

S.No. Name Title of the Ph. D Thesis  Status
1. Kumar Shubham Some Investigation on TiO2 Thin Film based MIS strucutres for hydrogen sensing applications (2012)
 		 Awarded
2. M.K.Singh Synchronization and Channel Estimation in MMID-OFDM communication systems ongoing
3. L. Naik Optical Communication ongoing
M.Tech. Dissertation

 

S.No. Name Title of the M.Tech. Dissertation Status
1. U.C. Mandal Design and Analysis of wideband PIFA Antenna (2012)
 		 Awarded
2. S. Pandey Tessellation unit using FPLI Awarded

Research Project undertaken:

  • Study of IMPATT devices (Co-investigator) - DST, Govt. of India
  • Study of Angular Division Multiplexing in optical communication
  • Some investigations on TiO2 Thin Film based MIS structures for hydrogen sensing applications

Published Books:

  • Introduction to Microwave Measurements (Co-author) - 2011
  • Microwave Circuit Theory and Applications (Co-author) - 2012

Services to BHU/IT-BHU/IIT(BHU):

  • Convener, Department Staff Committee
  • Member, Department Undergraduate Committee (DUGC)
  • Member, Department Finance/Budget, Purchase Committee
  • Member, Department Research Committee
  • Member, Academic Council, BHU

Services outside of BHU:

  • President, Muslim Welfare Educational Society, Varanasi
  • President, Teachers and Guardians Associations of J.P. Mehta Inter College, Varanasi
  • General Secretary, Banares Young Men Sports Association (Affiliated to District Sports Association, Varanasi).
  • Represented All India University Hockey Championship (Madurai)
  • Represented mnumber of times the University Hockey Team in East Zone University Hockey Championship

Major Awards, Fellowship of academics or professional societies: 
IT-BHU Colour in Hockey
Founder Life Member, Semiconductor Society of India
Founder Life Member, ​Optical Society of India
Fellow, IETE