Research / Specializations / ECE - Specialization I

Specialization : Microelectronics Engineering 

Microelectronics Engineering: The inception of this specialization was closely associated with the Centre for Research in Microelectronics (CRME) established by the Ministry of Human Resource Development (MHRD), Govt. of India in 1983. The main aim of this Centre is to carry out teaching and research in the area of modeling, simulation, design, fabrication and characterization of advanced microelectronic, nanoelectronic and optoelectronic devices and circuits for electronic, gas sensing, bio-sensing, photodetection and solar cell applications. In addition to the regular Ph.D. program under this specialization, the department also offers a separate specialization in the Microelectronics Engineering at M.Tech. level. A number of B.Tech. students also take advanced undergraduate projects on the fabrication and characterization of thick film and thin film devices for various electronic, optoelectronic and sensing applications. . 

Sub Areas :

  • Modeling and TCAD Simulation of Advanced non-classical MOS transistors, 
  • Colloidal Quantum Dots based Spectrum Selective and Self-Powered Photodetectors 
  • Metal-Oxide Thin Film Based Devices for Optoelectronic and Gas Sensing Applications, 
  • Thin Film Solar Cells, 
  • Nanostructure Electrodes for Bio-Sensing Applications, 

Major Achievements:

  • Prof. P. Chakrabarti, currently on deputation as Director of IIEST, West Bengal has been awarded as the prestigious MRSI Distinguished Lectureship Award for the year 2019-2020 at the 30th AGM of the Society held at IISc Bangalore on February 13, 2019.
  • Mr. Chandan Kumar (Ph.D. student of Prof. S. Jit) has received the prestigious DST- CEFIPRA Fellowship-2018 instituted by Indo French Centre for the Promotion of Advanced Research (IFCPAR/CEFIPRA), New Delhi to participate in European School on Nano science and Nanotechnology (ESONN)- Session 2018 organised by Université Grenoble Alpes, Grenoble, France (August 26 - September 15, 2018).
  • Prof. P. Chakrabarti has been serving as the director of IIEST, Shibpur (formerly B.E. College, Howrah, one the oldest Engineering Institution in India)
  • Prof. P. Chakrabarti has served as the Director of MNNIT Allahabad during 2011-2016.
  • Prof. P. Chakrabarti is serving as the Associate Editor of Journal of Electronic Materials-Springer.
  • Prof. S. Jit has been appointed as the Editor-In-Chief of the journal of Material Science Research India (UGC Approved Journal)
  • Prof. S. Jit has received the BOYSCAST Fellowship (2010-2011) from DST to work at the Max-Born-Institute, Division C, Berlin during Sept. 22 to Dec. 25, 2012.
  • Prof. S. Jit has received the Postdoctoral Research Fellowship, Georgia State University, Atlanta, USA, March-August, 2007.
  • Prof. S. Jit has received the INSA-Visiting Fellowship, 2006-2007.
  • Mr. Gopal Rawat (Ph.D student of Prof. S. Jit) has participated in Summer Institute on Sustainable Communities in Low-Resource Settings and Annual Research Conference held at University of British Columbia, Vancouver, Canada, during June 3, 2017 to June 11, 2017 organized by IC-IMPACTS (the India-Canada Centre for Innovative Multidisciplinary Partnerships to Accelerate Community Transformation and Sustainability) is the first, and only, Canada-India Research Centre of Excellence established through the Canadian Networks of Centres of Excellence (NCE) as a new Centre dedicated to the development of research collaborations between Canada and India. He was selected as one of the 12 students all over India to receive complete funding of the program.
  • Gopal Rawat and Chandan Kumar (both Ph.D students of Prof. S. Jit) participated in Summer Institute on Nanotechnologies held at University of Alberta, Canada, during May 29, 2016 to June 3, 2016 organized by IC-IMPACTS (the India-Canada Centre for Innovative Multidisciplinary Partnerships to Accelerate Community Transformation and Sustainability) is the first, and only, Canada-India Research Centre of Excellence established through the Canadian Networks of Centres of Excellence (NCE) as a new Centre dedicated to the development of research collaborations between Canada and India.
  • Mr. Hemant Kumar Bhatt (Ph.D student of Prof. S. Jit) has won the Gold Medal on Institute day 2017.

Recent Publications (Last 3 Years):

  • Prince Kumar Singh, Kamalaksha Baral, Sanjay Kumar, Sweta Chander and Satyabrata Jit, “Analytical Drain Current Model of Stacked Oxide SiO2/HfO2 Cylindrical Gate Tunnel FETs,” Indian Journal of Physics, (Accepted)-2019.
  • Rishibrind Kumar Upadhyay, Abhinav Pratap Singh, Deepchandra Upadhyay, Smrity Ratan, Chandan Kumar, and S. Jit, “High-Performance Photodetector Based on Organic-Inorganic Perovskite CH3NH3PbI3/ZnO Heterostructure,” IEEE Photonic Technology Letters (Accepted) DOI: 10.1109/LPT.2019.2920780.
  • D. Gola, B. Singh, J. Singh, S. Jit and P K Tiwari, "Static and Quasi-Static Drain Current Modeling of Tri-Gate Junctionless Transistor with Substrate Bias Induced Effects," IEEE Trans. Electron Devices (Accepted) DOI: 10.1109/TED.2019.2915294.
  • Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bratindranath Mukherjee, Bhola Nath Pal, and S. Jit, “Effects of Optical Resonance on the Performance of Metal (Pd, Au)/CdSe Quantum Dots (QDs)/ ZnO QDs Optical Cavity Based Spectrum Selective Photodiodes,” IEEE Trans. Nanotechnology, Vol. 18, pp. 365-373, 2019.
  • S. K. Yadav, G. Rawat, S. Pokharia, S. Jit, and H. Mishra, “Excited-State Dynamics of Quinine Sulphate and Its Di-Cation Doped in Polyvinyl Alcohol Thin Films Near Silver Nanostructure Islands,” ACS Omega, Vol. 4, pp.5509-5516, 2019.
  • S Chander, S Baishya, S Kumar, P K Singh, K Baral, M R Tripathy, A K Singh and S Jit, “Two-Dimensional Analytical Modeling for Electrical Characteristics of Ge/Si SOI-Tunnel FinFETs,” Superlattices and Microstructures (Accepted)
  • Ashwini Kumar Mishra, Bratindranath Mukherjee, Amit Kumar, Deepak Kumar Jarwal, Smrity Ratan, Chandan Kumar, and Satyabrata Jit, “Superficial fabrication of gold nanoparticles modified CuO nanowires electrode for non-enzymatic glucose detection,” RSC Advances, Vol. 9, pp.1772 – 1781, 2019
  • A. Tripathi, H. P. Gupta, K.K. Shukla, S. Jit, and T. Dutta, “Performance Evaluation of Routing Protocols for Ad-hoc Networks with Mobility Variation,” J. Nanoelectronics and Optoelectronics (Accepted).
  • Praveen Kumar Sahu, Lalit Chandra, Rajiv K. Pandey, Niraj Singh Mehta, R. Dwivedi, V. N. Mishra, and Rajiv Prakash, “Fast Development of Self‐Assembled, Highly Oriented Polymer Thin Film and Observation of Dual Sensing Behavior of Thin Film Transistor for Ammonia Vapor,” Macromolecular Chemistry and Physics, pp. 1900010, 2019.
  • Vijay Kumar Singh; Sanjeev Mani Yadav,  Himanshu Mishra;  Rahul Kumar, Radhey Shyam Tiwari,  Amritanshu Pandey, and Anchal Srivastava, “WS2 Quantum Dot Graphene Nanocomposite Film for UV Photodetection”, ACS Applied Nano Materials, (accepted) 2019.
  • Sanjeev Mani Yadav, and Amritanshu Pandey, Highly Efficient and Broadband Hybrid Photodetector Based on 2D Layered Graphene / CTS Quantum Dots, IEEE Trans Electron Device ( accepted) 2019.
  • C. Kumar, G. Rawat, H. Kumar, Y. Kumar, S. Ratan, R. Prakash, and S. Jit, “Electrical and Optical Characteristics of PQT-12 Based Organic TFTs Fabricated by Floating-Film Transfer Method,”  IEEE Trans. Nanotechnology, Vol. 17 (6), pp.1111-1117, 2018
  • C. Kumar, G. Rawat, H. Kumar, Y. Kumar, S. Ratan, R. Prakash, and S. Jit, “"Electrical and Ammonia Gas Sensing Properties of PQT-12/CdSe Quantum Dots Composite Based Organic Thin Film Transistors," IEEE Sensors Journal, Vol. 18, pp. 6085-6091, 2018
  • Y. Kumar, H. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal and S. Jit, “Spectrum Selectivity and Responsivity of  ZnO Nanoparticles Coated  Ag/ZnO QDs/Ag UV photodetectors,” Photonics Technology Letters, Vol 30, pp.1147-1150, 2018.
  • C. Kumar, G. Rawat, H. Kumar, Y. Kumar, S. Ratan, R. Prakash, and S. Jit, “Poly (3, 3’’’-dialkylquaterthiophene) Based Flexible Nitrogen Dioxide Gas Sensor,” IEEE Sensors Letters, Vol 2, pp. 2475-1472, 2018.
  • A. Sharma, N. Chaurasia, S. Anumol, Y. Kumar, S. Jit, A. Pandey and B N Pal, “Solution Processed Li5AlO4 dielectric for low voltage transistor fabrication and its application for metal oxide/quantum dot heterojunction phototransistor,” Journal of Materials Chemistry C (RSC), Vol 6, pp 790-798, 2018 DOI: 10.1039/C7TC05074G.
  • Chandan Kumar, Gopal Rawat, Hemant Kumar, Yogesh Kumar, Rajiv Prakashb and S. Jit, “Flexible poly (3, 3'''- dialkylquaterthiophene) based interdigitated metal-semiconductor-metal ammonia gas sensor,” Sensors and Actuators: B. Chemical, Vol. 255, Part 1, pp. 203-209, 2018 (IF: 5.401)
  • A. Tripathi, H. P. Gupta, T. Dutta, R. Mishra, K.K. Shukla and S. Jit, “Coverage and Connectivity in WSNs: A Survey, Research Issues and Challenges,” IEEE Access, Vo. 6, pp. 26971 – 26992, June 2018.
  • A. Tripathi, H. P. Gupta, T. Dutta, D. Kumar, S. Jit, and K. K. Shukla, “A Target Tracking System Using Directional Nodes in Wireless Sensor Networks,” IEEE Systems Journal, Vol. 13, 1618-1627, June 2019.
  • A. Tripathi, H. Gupta, T. Dutta, K.K. Shukla and S. Jit , “A Target Tracking System using Directional nodes in Wireless Sensor Networks,” IEEE Access, Vol. 6, pp. 26971-26992, 2018
  • S. Ratan, C. Kumar, A. Kumar, D. K. Jarwal, A. K. Mishra, and S. Jit, “Fabrication and Characterization of Titanium Dioxide Based Pd/TiO2/Si MOS Sensor for Hydrogen Gas,” IEEE Sensors Journal, Vol. 18, pp. 3952-3959, 2018  DOI: 10.1109/JSEN.2018.2819805
  • Sanjay Kumar, Kunal Singh, Sweta Chander, Ekta Goel, Prince Kumar Singh, Kamalaksha Baral, Balraj Singh, and S. Jit, “2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs with a SiO2/HfO2 Stacked Gate-Oxide Structure,” IEEE Trans. Electron Devices, Vol.: 65, pp. 331-338, 2018.
  • Amulya Nemoori, Himanshu Mishra, Vijay K. Singh, P. K. Shukla, Anchal Srivastava and Amritanshu Pandey, A curious observation of Pauli-Blocking in MoS2-Quantum dots/ Graphene hybrid system, Journal of Applied Physics 124, 124501 (2018); https://doi.org/10.1063/1.5042278
  • Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bratindranath Mukherjee, Bhola Nath Pal, and S. Jit, “Heating Effects of Colloidal ZnO Quantum Dots (QDs) on ZnO QDs/CdSe QDs/MoOx Photodetectors,” IEEE Trans. Nanotechnology, Vol. 16, pp. 1073-1080, 2017.
  • H. Kumar, Y. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal and S. Jit, “Colloidal CdSe Quantum Dots and PQT-12 Based Low-Temperature Self-Powered Hybrid Photodetector,” IEEE Photonics Technology Letters, Vol. 29, No. 20, pp. 1715 - 1718, 2017.
  • Y. Kumar, H. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal and S. Jit, “Visible-blind Au/ZnO Quantum dots based Highly Sensitive and Spectrum Selective Schottky Photodiode,” IEEE Trans. Electron Devices, Vol. 64, No. 7, pp. 2874 - 2880, July 2017.
  • H. Kumar, Y. Kumar, B. Mukherjee, G. Rawat, C. Kumar, B. N. Pal and S. Jit, “Electrical and Optical Characteristics of Self-Powered Colloidal CdSe Quantum Dot (QD) Based Photodiode,” IEEE J. Quantum Electronics, Vol. 53, pp. 4400108:1-8, 2017.
  • G. Rawat, H. Kumar, Y. Kumar, C. Kumar, and S. Jit, “Effective Richardson Constant of Sol-Gel Derived TiO2 Films in n-TiO2/p-Si Heterojunctions," IEEE Electron Device Letters, Vol. 38, No. 5, pp. 633 - 636, 2017.
  • S. Kumar,  E. Goel,  K. Singh, B. Singh, P. K. Singh, K. Baral  and  S. Jit, “2D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs with a SiO2/HfO2 Stacked Gate-Oxide Structure,” IEEE Trans. Electron Devices, Vol 64, No. 3, pp. 960-968,  March 2017.
  • B. Singh, D. Gola, K. Singh, E. Goel, S. Kumar and S. Jit, “Two-Dimensional Analytical Threshold Voltage Model for Dielectric Pocket Double-Gate Junctionless FETs by Considering Source/Drain Depletion Effect,” IEEE Trans. Electron Devices, Vol 64, No. 3, pp. 901 - 908, 2017.
  • Y. Kumar, H. Kumar, G. Rawat, C. Kumar, A. Sharma, B. N. Pal and S. Jit, "Colloidal ZnO Quantum Dots Based Spectrum Selective Ultraviolet Photodetectors" IEEE Photonics Technol. Lett., Vol. 29, No. 4, pp. 361 - 364, 2017.
  • G. Rawat, D. Somvanshi, Y. Kumar, H. Kumar, C. Kumar and S. Jit, “Electrical and Ultraviolet-A Detection Properties of E-Beam Evaporated n-TiO2 Capped p-Si Nanowires Heterojunction Photodiodes”,  IEEE Trans. Nanotechnology, Vol. 16, No. , pp. 49 - 57, Jan. 2017.
  • S. Gopal, P. Maity, Y. kumar, H. Kumar, V. Gangwar, S. Chatterjee, S. Jit, A. K. Ghosh, and B. N. Pal, “Single Quantum Dot Rectifying Diode With Tunable Threshold Voltage,” Journal of Materials Chemistry C., Vol. 5, pp. 9792-9798, 2017 (DOI: 10.1039/c7tc02537h) (IF: 5.256)
  • Chandan Kumar, Gopal Rawat, Hemant Kumar, Yogesh Kumar, Rajiv Prakash and S. Jit, “Electrical and ammonia gas sensing properties of poly (3, 3‴- dialkylquaterthiophene) based organic thin film transistors fabricated by floating-film transfer method,” Organic Electronics, Vol. 48, pp. 53 – 60, 2017 (IF: 3.399)
  • A. B. Yadav and S. Jit, “Particle Size effects on the Hydrogen Sensing Properties of Pd/ZnO Schottky Contacts Fabricated by Sol-gel Method,” Int. J. Hydrogen Energy, Vol. 42, pp.786-794, 2017 (IF: 3.582)
  • Hemant Kumar, Yogesh Kumar; Gopal Rawat; Chandan Kumar; Bratindranath Mukherjee; Bhola Nath Pal; S. Jit, “Electrical and Optical Characteristics of Solution processed MoOx and ZnO QDs Heterojunction,” MRS Communications, Vol. 7, Issue 3, pp. 607-612, September 2017.
  • Shaivalini Singh, Pramod Kumar Tiwari, Hemant Kumar, Yogesh Kumar, Gopal Rawat, Sanjay Kumar, Kunal Singh, Ekta Goel, S. Jit and Si-Hyun Park, “Theoretical and Experimental Study of UV Detection Characteristics of Pd/ZnO Nanorod Schottky Diodes,” Nano, 12: 1750137(8), 2017.
  • S. Chander, S. K. Sinha, S. Kumar, P. Singh, K. Baral, K. Singh and S. Jit, “Temperature Analysis of Ge/Si Heterojunction SOI-Tunnel FET,” Superlattices and Microstructures, Vol. 110, 162-170, 2017. DOI: 10.1016/j.spmi.2017.08.048
  • K. Singh, S Kumar, E Goel, B Singh, P K Singh, K Baral, H Kumar, and S. Jit , “ Effects of Source/Drain Elevation and Side Spacer Dielectric on Drivability Performance of Non-Abrupt Ultra Shallow Junction Gate Underlap GAA MOSFETs,” Indian Journal of Physics,  Vol. 92, pp 171–176, 2018
  • Balraj Singh, Trailokya Nath Raia, Deepti Gola,  Kunal Singh, Ekta Goela, Sanjay Kumar, Pramod Kumar Tiwari, S. Jit, “Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure,” Materials Science in Semiconductor Processing, Vol. 71, pp. 161–165, 2017.
  • Amritanshu Pandey, Archana Tripathi, Raghavi, S.K. Srivastava and S. Jit, “Analysis of Ternary Layer Photonic Band Gap Tunable Filters for WDM Applications,” J. Nanoelectronics and  Optoelectronics, Volume 12, pp. 331-336, 2017
  • S. Singh, Y. Kumar, H. Kumar, S. Vyas, C. Periasamy, P. Chakrabarti, S. Jit, and Si-Hyun Park, “A study of hydrothermally grown ZnO nanorod-based metal-semiconductor metal UV detectors on glass substrates,” Nanomaterials and Nanotechnology, Vol 7, pp. 1-5, 2017.
  • Shaivalini Singh, S. Jit, and Si-Hyun Park, “Characterization of Ag/ZnO Nanorod Schottky Diode-based Low-voltage Ultraviolet Photodetector,” Nano (World Scientific), Vol. 12, pp. 1-7, 2017.
  • Ekta Goel, Sanjay Kumar, Balraj Singh, Kunal Singh, S. Jit, “Two-dimensional Model for Subthreshold Current and Subthreshold Swing of Graded-Channel Dual-Material Double-Gate (GCDMDG) MOSFETs,” Superlattices and Microstructures, Vol.106, pp. 147-155, 2017
  • E. Goel, K. Singh, B. Singh, S. Kumar, and S. Jit, “2-D Analytical Modeling of Subthreshold Current and Subthreshold Swing for Ion-Implanted Strained-Si Double-Material Double-Gate (DMDG) MOSFETs,” Indian Journal of Physics, Vol. 91, Issue 9, pp 1069–1076, 2017.
  • B. Singh, D. Gola, K. Singh, E. Goel, S. Kumar, and S. Jit, “Analytical Modeling of Subthreshold Characteristics of Ion-Implanted Symmetric Double Gate Junctionless Field Effect Transistors”, Materials Science in Semiconductor Processing, Vol. 58, pp.82-88, 2017.
  • Hemant Kumar, Yogesh Kumar, Kunal Singh, Sanjay Kumar, Gopal Rawat, Chandan Kumar, Bhola N. Pal, S. Jit, “Kink Effect in TiO2 Embedded ZnO Quantum Dot based Thin Film Transistors”, IET Electronics Letters, vol. 53 no. 4, pp. 262 – 264, 2017.
  • E. Goel, B. Singh, S. Kumar, K. Singh, and S. Jit, “Analytical Threshold Voltage Modeling of Ion-Implanted Strained-Si Double-Material Double-Gate (DMDG) MOSFETs,” Indian Journal of Physics, vol. 91 no. 4, pp. 383 – 390, 2017.
  • K. Singh, M. Kumar, Ekta Goel, S. Kumar, K. Singh, B. Singh and S. Jit, “Effects of Elevated Source/Drain and Side Spacer Dielectric on the Drivability Optimization of Non-Abrupt Ultra Shallow Junction Gate Underlap DG MOSFETs,” Journal of Electronic Materials (JEMS), vol. 46 no. 1, pp. 520–526, 2017.
  • K. Singh, M. Kumar, Ekta Goel, S. Kumar, K. Singh, B. Singh and S. Jit, “Subthreshold Current and Swing Modeling of Gate Underlap DG MOSFETs with Source/Drain Lateral Gaussian Doping Profile,” Journal of Electronic Materials (JEMS), vol. 46 no. 1, pp. 579–584, 2017.
  • Praveen Kumar Sahu, Manish Pandey, Chandan Kumar, Shyam S. Pandey,Wataru Takashima, V.N. Mishra, Rajiv Prakash, et al., “Air-stable vapor phase sensing of ammonia in sub-threshold regime of poly(2,5-bis(3-tetradecylthiophen-2yl)thieno(3,2-b)thiophene) based polymer thin-film transistor,” Sensors Actuators, B Chem., vol. 246, pp. 243–251, 2017.
  • Lalit Chandra, R. Dwivedi, V.N.Mishra, “Highly sensitive sensor using brush coated ZnO nanoparticle” Materials Research Express, Volume 4, Number 10,2017.
  • Lalit Chandra, Praveen Kumar Sahu, R. Dwivedi, V.N.Mishra, “Optimized hydrogen sensing characteristic of Pd/ZnO nanoparticles based Schottky diode on glass substrate” Materials Research Express, Volume 4, Number 10,2017.
  • Lalit Chandra,Praveen Kumar Sahu, R. Dwivedi, V.N.Mishra, “Electrical and NO2 sensing characteristics of Pd/ZnO nanoparticles based Schottky diode at room temperature” Materials Research Express, Volume 4, Number 12,2017.
  • Amritanshu Pandey and Aditya Bansod, Pd/ZnO Schottky Ultraviolet Photodiode Fabricated on ITO Using rGO Seed Layer, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 29, NO. 14, JULY 15, 2017 1191
  • Amritanshu Pandey, Archana Tripathi, Raghavi, S.K. Srivastava and S. Jit, Analysis of Ternary Layer Photonic Band Gap Tunable Filters for WDM Applications, J. Nanoelectron. Optoelectron.  Volume 12, Number 4, April 2017, pp. 331-336(6).

Recent Conference Proceedings:

  • Kumar, S.; Baral, K.; Chander, S.; Singh, P. K.; Singh, K.; Jit, S. Influence of Localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs. 2018 3rd Int. Conf. Converg. Technol. I2CT 2018, 1–4.
  • Ratan, S.; Mondal, D.; Kumar, C.; Kumar, A.; Jarwal, D. K.; Mishra, A. K.; Kar, R.; Jit, S. Optimization of Area of CMOS Differential Amplifier Using Modified PSO Algorithm. 2018 3rd Int. Conf. Converg. Technol. I2CT 2018, 1–6.
  • Smrity Ratan, Chandan Kumar, Amit Kumar, Deepak Kumar Jarwal, Ashawani Kumar Mishra, Rishibrind Kumar Upadhyay, and Satyabrata Jit, “Performance of ZnO Quantum Dots Based Photodetectors: Effect of Metal Electrodes,” IEEE INDICON, Coimbatore, India, 2018.
  • Smrity Ratan, Debalina Mondal, Anima Rajendran, Chandan Kumar, Amit Kumar, Deepak Kumar Jarwal, Ashwani Kumar Mishra, Rishibrind Kumar Upadhyay, Rajib Kar and Satyabrata Jit, “Design of a High Gain Low Noise Amplifier Using 0.18μm CMOS Technology,” IEEE ICMETE, Ghaziabad, India, 2018.
  • Rishibrind Kumar Upadhyay, Chandan Kumar, Abhinav Pratap Singh, Deep Upadhyay, Deepak Kumar Jarwal, Amit Kumar, Smrity Ratan, and Satyabrata Jit, “Fabrication and Characterization of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3 Based Metal-Semiconductor-Metal Photodetector,” IEEE INDICON, Coimbatore, India, 2018.
  • Singh, B.; Jit, S. Performance Investigation of Cylindrical Double Gate Junctionless FET. 2018 5th IEEE Uttar Pradesh Sect. Int. Conf. Electr. Electron. Comput. Eng. UPCON 2018, No. November 2018, 1–5.
  • Baral, K.; Singh, P. K.; Kumar, S.; Chander, S.; Singh, K.; Jit, S. Performance Analysis of Nanotube Junctionless Accumulation Mode MOSFETs with Ion Implanted Doping Profile. 2018 3rd Int. Conf. Converg. Technol. I2CT 2018, 1–5.
  • Kumar, Y.; Kumar, H.; Rawat, G.; Kumar, C.; Goel, V.; Pal, B. N.; Jit, S. Advances in Signal Processing and Communication; Springer Singapore, 2019; Vol. 526.
  • A. K. Singh, M. R. Tripathy, P. K. Singh, K. Baral, S. Chander, S. Jit, “DC and RF Performance Optimization of Strained Si/Si1-xGex Heterojunction SOI P-TFET,” 15th IEEE Int. Conf. INDICON 2018.
  • Kamalaksha Baral, Prince Kumar Singh, Sanjay Kumar, Sweta Chander, Manas Ranjan Tripathy and S. Jit, “Dual Material-Stacked Hetero-Dielectric-Junctionless Accumulation Mode Nanotube MOSFET for enhanced Hot Carrier and Trapped Charges Reliability,” 3rd EDTM, Singapore, 2019.
  • Rahul Kumar, Vijay Kumar Singh, Himanshu Mishra , Anchal Srivastava, Amritanshu Pandey, UV Photodetector based on Graphene-WS2 Quantum dots, GRAPHENE2018, June 26-30, 2018, Dresden, Germany.
  • Shaswat Mishra and Amritanshu Pandey, Hybrid Peak-to-Average Power Ratio Reduction Technique for Sub-Carrier Index Modulated OFDM, International Conference on Signal Processing and Communication (ICSPC’17) – 28th & 29th July 2017, COIMBATORE, TAMILNADU, India
  • Ankush Kumar, Akanksha Pandey,P K Sahu, Lalit Chandra, R. Dwivedi, V.N.Mishra, “Design of DRAM Sense Amplifier using 45nm Technology” ISDCS Shibpur,2018.
  • Ankush Kumar, Akanksha Pandey,P K Sahu, Lalit Chandra, R. Dwivedi, V.N.Mishra, “ Design and Analysis of Low Leakage SRAM cell using 45nm Technology”, 2018.
  • P. Kumar Sahu, L. Chandra, R. K. Pandey, R. Prakash, and V. N. Mishra, “Enhanced Performance of Polymer TFTs Based Vapour Phase Sensing of Ammonia.”2017.

 

Faculty:

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